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MagyarSK Hynix annuncia gli SSD PE8000 a basso consumo per il settore enterprise
Basati sull'architettura 4D NAND TLC a 96 livelli, adottano un controller di memoria proprietario capace di gestire capacità sino al taglio di 8 TB. Considerato l'utilizzo nei datacenter, non è di certo una sorpresa trovare tra le specifiche la piena compatibilità con l'interfaccia di tipo U.2 e U.3. Entrambe le unità assicurano una velocità in lettura sequenziale di 6.5 GB/s e una scrittura sequenziale di 3.7 GB/s. Importanti le prestazioni in lettura casuale che superano il milione di IOPS, mentre quelle in scrittura casuale si fermano a 320K IOPS. Mentre PE8010 viene definito come la soluzione ideale per carichi di lettura ad alta intensità, la proposta PE8030 viene raccomandata per un utilizzo misto.
Rispetto ai modelli di precedente generazione rilasciati nel corso del 2019, le nuove unità garantiscono letture sequenziali più veloci del 103% e scritture casuali superiori del 357%. Nonostante le elevate prestazioni raggiunte, il TDP delle singole unità raggiunge un consumo massimo di 17 Watt.
Nel corso dei prossimi mesi l'azienda ha intenzione di presentare anche il modello PE8111, sviluppato sul form factor E1.L e ottimizzato per le piattaforme d'archiviazione di Open Compute Project. Il nuovo eSSD, atteso per la seconda metà dell'anno, sarà in grado di raggiungere rispettivamente i 3.4 GB/s e 3 GB/s in lettura e scrittura sequenziale. Le prestazioni in lettura e scrittura casuale dovrebbero attestarsi su 700K e 100K IOPS.
Di seguito il comunicato stampa della società.
Source(s)
SK Hynix
Seoul, April 07, 2020
SK hynix Inc. (or “the Company,” www.skhynix.com)) today announced the availability of the “PE8000” series, its newest and most advanced line-up of enterprise Solid State Drives (eSSDs). The PE8000 series is designed to meet the diverse needs of datacenter customers.
PE8010 and PE8030 are the Company’s first Non-Volatile Memory express (NVMe) SSDs supporting the PCIe Gen4 Interface. Both drives feature the Company’s 96-layer Triple-Level Cell (TLC) 4D NAND flash and an in-house controller, providing a maximum capacity of 8TB, and are compatible with U.2/U.3 form factors. PE8010 is tailored to read-intensive workloads, while PE8030 is optimized for mixed-use.
The two products boast the strongest performance among low-power PCIe Gen4 SSDs in the market. Both PE8010 and PE8030 can deliver sequential read speeds of up to 6,500MB/s and sequential write speeds of up to 3,700MB/s, with random read and write of up to 1,100K and 320K Input/output operations per second (IOPs), respectively. Compared to the Company’s previous solution launched in 2019, PE8010 offers substantial performance improvements of 103% for sequential reads and 357% for random writes at maximum power consumption of 17W. Both drives are now sampling with customers.
Meanwhile, PE8111 is a high-capacity storage solution optimized for read-intensive applications, built with SK hynix’s state-of-the-art technology, the world’s first 128-layer 1Tb (Terabit) TLC 4D NAND flash. SK hynix is currently developing a 16TB version of PE8111 eSSD in the new EDSFF 1U Long (E1.L) form factor, and plans to develop a 32TB solution in the future. The Company is slated to start sampling the 16TB PE8111 eSSD in the second half of this year.
PE8111 is specifically optimized for Open Compute Project (OCP) storage platforms, supporting sequential read and write speeds of up to 3,400MB/s and 3,000MB/s, and random read and write of up to 700K and 100K IOPs, respectively. Most notably, the solution provides the same capacity with only half the amount of NAND dies compared to the solution based on 512Gb (Gigabit) NAND flash. As a result, the solution offers superb performance, power efficiency, and price competitiveness, excelling across the board in the existing eSSD solutions market.
SK hynix is a global memory semiconductor manufacturer with DRAM, NAND flash, and controllers in its portfolio, a full range of technologies for SSDs. Despite being a relative latecomer to the eSSD market, the Company continues to strengthen its presence with the expertise and know-how gained as a leading DRAM manufacturer. SK hynix will keep expanding thus with vigorous product development and increasingly diverse offerings going forward.
“SK hynix has successfully introduced its PCIe Gen3 eSSD products to the market, solidifying its competitive position in the enterprise storage business,” said Vice President Samil Kim, head of the eSSD business at SK hynix. “We will reinforce our technology leadership through the mass production of our PCIe Gen4 products in the second half of this year, and also provide eSSDs with high performance and reliability to our hyperscaler and enterprise OEM customers.”
About SK hynix Inc.
SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com), news.skhynix.com).
